IndiumV3, Russie, Analysis, bibRecord, 000D51

Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Identifieur interne : 000D51 ( Russie/Analysis ); précédent : 000D50; suivant : 000D52

Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Auteurs : RBID : Pascal:99-0411913

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Couche épitaxique, Croissance cristalline, Epitaxie phase liquide, Amélioration, Perspective, Solution solide, Matériau semiconducteur, Composé n éléments, Hétérojonction, Indium Arsénioantimoniure, Gallium Arsénioantimoniure, Aluminium Arsénioantimoniure, 8115L, InGaAsSb, As Ga In Sb, AlGaAsSb, Al As Ga Sb.

English descriptors

KwdEn :
- Aluminium Antimonides arsenides, Crystal growth, Epitaxial layers, Experimental study, Gallium Antimonides arsenides, Heterojunctions, Improvement, Indium Antimonides arsenides, LPE, Multi-element compounds, Perspective, Semiconductor materials, Solid solutions.

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Pascal:99-0411913

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases</title>
<author><name sortKey="Mishurnyi, V A" uniqKey="Mishurnyi V">V. A. Mishurnyi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Alvaro Obregón 64</s1>
<s2>San Luis Potosi, SLP, 78000</s2>
<s3>MEX</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Mexique</country>
<wicri:noRegion>San Luis Potosi, SLP, 78000</wicri:noRegion>
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</author>
<author><name sortKey="De Anda, F" uniqKey="De Anda F">F. De Anda</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Alvaro Obregón 64</s1>
<s2>San Luis Potosi, SLP, 78000</s2>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Mexique</country>
<wicri:noRegion>San Luis Potosi, SLP, 78000</wicri:noRegion>
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</author>
<author><name sortKey="Gorbatchev, A Yu" uniqKey="Gorbatchev A">A. Yu. Gorbatchev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Alvaro Obregón 64</s1>
<s2>San Luis Potosi, SLP, 78000</s2>
<s3>MEX</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Mexique</country>
<wicri:noRegion>San Luis Potosi, SLP, 78000</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vasil Ev, V I" uniqKey="Vasil Ev V">V. I. Vasil Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Politecknicheskaya 26</s1>
<s2>St. Petersburg</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
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<publicationStmt><idno type="inist">99-0411913</idno>
<date when="1999">1999</date>
<idno type="stanalyst">PASCAL 99-0411913 INIST</idno>
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<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Antimonides arsenides</term>
<term>Crystal growth</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>Gallium Antimonides arsenides</term>
<term>Heterojunctions</term>
<term>Improvement</term>
<term>Indium Antimonides arsenides</term>
<term>LPE</term>
<term>Multi-element compounds</term>
<term>Perspective</term>
<term>Semiconductor materials</term>
<term>Solid solutions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Couche épitaxique</term>
<term>Croissance cristalline</term>
<term>Epitaxie phase liquide</term>
<term>Amélioration</term>
<term>Perspective</term>
<term>Solution solide</term>
<term>Matériau semiconducteur</term>
<term>Composé n éléments</term>
<term>Hétérojonction</term>
<term>Indium Arsénioantimoniure</term>
<term>Gallium Arsénioantimoniure</term>
<term>Aluminium Arsénioantimoniure</term>
<term>8115L</term>
<term>InGaAsSb</term>
<term>As Ga In Sb</term>
<term>AlGaAsSb</term>
<term>Al As Ga Sb</term>
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<fA06><s2>8</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MISHURNYI (V. A.)</s1>
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<fA11 i1="02" i2="1"><s1>DE ANDA (F.)</s1>
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<fA11 i1="03" i2="1"><s1>GORBATCHEV (A. Yu.)</s1>
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<fA11 i1="04" i2="1"><s1>VASIL'EV (V. I.)</s1>
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<fA14 i1="01"><s1>IICO-UASLP, Alvaro Obregón 64</s1>
<s2>San Luis Potosi, SLP, 78000</s2>
<s3>MEX</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>A.F. Ioffe Physico-Technical Institute, Politecknicheskaya 26</s1>
<s2>St. Petersburg</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
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<fA20><s1>959-962</s1>
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<fA21><s1>1999</s1>
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<s2>15479</s2>
<s5>354000089390770060</s5>
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<fA44><s0>0000</s0>
<s1>© 1999 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>18 ref.</s0>
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<fA47 i1="01" i2="1"><s0>99-0411913</s0>
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<fA60><s1>P</s1>
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<fC02 i1="01" i2="3"><s0>001B80A15L</s0>
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<s5>01</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Couche épitaxique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Epitaxial layers</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Croissance cristalline</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Crystal growth</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>LPE</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Amélioration</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Improvement</s0>
<s5>05</s5>
</fC03>
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<s5>05</s5>
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<fC03 i1="06" i2="X" l="FRE"><s0>Perspective</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Perspective</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Perspectiva</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Solution solide</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Solid solutions</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé n éléments</s0>
<s5>10</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Multi-element compounds</s0>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Heterojunctions</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Indium Arsénioantimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Indium Antimonides arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Gallium Arsénioantimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Gallium Antimonides arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Aluminium Arsénioantimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Aluminium Antimonides arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>8115L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>InGaAsSb</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As Ga In Sb</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>AlGaAsSb</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Al As Ga Sb</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>08</s5>
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<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>08</s5>
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<fC07 i1="02" i2="3" l="FRE"><s0>Antimoniure</s0>
<s2>NA</s2>
<s5>11</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Antimonides</s0>
<s2>NA</s2>
<s5>11</s5>
</fC07>
<fN21><s1>263</s1>
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Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri